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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ557
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.4 +0.1 –0.05 0.16+0.1 –0.06
0.65–0.15
+0.1
2.8 ±0.2
3
1.5
0 to 0.1
1 2
FEATURES
• Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A) RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A) RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 ±0.
2SJ557 Datasheet
