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2SD1695 - NPN SILICON EPITAXIAL TRANSISTOR

2SD1695 Description

www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AM.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

2SD1695 Features

* On-chip protection elements enable time and cost reduction. C to E: Dumper diode C to B: Constant diode
* Low collector saturation voltage QUALITY GRADES
* Standard DataShee DataSheet4U. com Electrode Connection 1. Emitter 2. Collector 3. Base 4. Collector (fin) Please

2SD1695 Applications

* ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO

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Datasheet Details

Part number
2SD1695
Manufacturer
NEC
File Size
276.99 KB
Datasheet
2SD1695_NEC.pdf
Description
NPN SILICON EPITAXIAL TRANSISTOR

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NPN SILICON EPITAXIAL TRANSISTOR NEC
NEC 2SD1695-like datasheet