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DATA SHEET
SILICON TRANSISTOR
2SC5194
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
• Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz • Large Absolute Maximum Collector Current • 4-Pin Compact Mini Mold Package
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.2
0.3 –0.05
+0.1
NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz IC = 100 mA
2.0±0.2
1.25±0.1
(1.25) 0.60 0.65
+0.1
ORDERING INFORMATION
PART NUMBER 2SC5194-T1 QUANTITY 3 Kpcs/Reel PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape. Embossed tape 8 mm wide. Pin 1 (Collector), Pin 2 (Emitter) face to perforation side of the tape.
0.4 –0.05
0.9±0.1
0.
2SC5194-T1 Datasheet
