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2SC4703 - NPN TRANSISTOR

Description

The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V).

characteristic makes it suitable for CATV, tele-communication and other use.

Features

  • Low distortion at low supply voltage. IM2 55 dB TYP. , IM3 76 dB TYP. @VCE = 5 V, IC = 50 mA, VO = 105 dB/75.
  • Large PT with surface mount type package. 0.8 MIN. 0.42 ±0.06 E 1.5 C B 0.42±0.06 0.47 ±0.06 3.0 0.41 +0.05.
  • 0.03.

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Datasheet Details

Part number 2SC4703
Manufacturer NEC
File Size 66.35 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC4703 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage (VCE = 5 V). This low distortion 4.5±0.1 1.6±0.2 1.5±0.1 PACKAGE DIMENSIONS (Unit: mm) characteristic makes it suitable for CATV, tele-communication and other use. It employs surface mount type plastic package, Power Mini Mold (SOT-89). FEATURES • Low distortion at low supply voltage. IM2 55 dB TYP., IM3 76 dB TYP. @VCE = 5 V, IC = 50 mA, VO = 105 dB/75 • Large PT with surface mount type package. 0.8 MIN. 0.42 ±0.06 E 1.5 C B 0.42±0.06 0.47 ±0.06 3.0 0.41 +0.05 −0.
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