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2SC4094 - NPN Transistor

Description

The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.

Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity.

proprietary new fabrication technique.

Features

  • NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA.
  • S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA 0.6.
  • 0.05 +0.1 Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 20 10 1.5 65 200 150 V V V mA mW 1.1.
  • 0.1 0.8.

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Datasheet Details

Part number 2SC4094
Manufacturer NEC
File Size 102.17 KB
Description NPN Transistor
Datasheet download datasheet 2SC4094 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4094 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. proprietary new fabrication technique. This achieved by direct nitride 2.9±0.2 (1.8) 0.85 0.95 PACKAGE DIMENSIONS (Units: mm) 0.4 −0.05 0.4 −0.05 0.4 −0.05 0.16 −0.06 +0.1 2.8 −0.3 +0.2 1.5 −0.1 2 3 4 5° 0 to 0.1 5° +0.2 +0.1 +0.1 passivated base surface process (DNP process) which is an NEC +0.1 FEATURES • NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA • S21e2 = 15 dB TYP. @f = 1.
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