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2SB1453 - PNP SILICON EPITAXIAL POWER TRANSISTOR

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • High DC current amplifier ratio hFE ≥ 100 (VCE =.
  • 5 V, IC =.
  • 0.5 A).
  • Mold package that does not require an insulating board or insulation bushing.

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Datasheet Details

Part number 2SB1453
Manufacturer NEC
File Size 130.31 KB
Description PNP SILICON EPITAXIAL POWER TRANSISTOR
Datasheet download datasheet 2SB1453 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRAWING (UNIT: mm) FEATURES • High DC current amplifier ratio hFE ≥ 100 (VCE = −5 V, IC = −0.