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2SA1714 - PNP SILICON EPITAXIAL POWER TRANSISTOR

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • High DC current amplifiers due to darlington connection.
  • Large current capacitance and low VCE(sat).
  • TO-126 power transistor with high power dissipation.
  • Complementary transistor with 2SC4342.

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Full PDF Text Transcription for 2SA1714 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SA1714. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power...

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FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse mortors or blushless mortor of OA and FA equipment. PACKAGE DRAWING (UNIT: mm) FEATURES • High DC current amplifiers due to darlington connection • Large current capacitance and low VCE(sat) • TO-126 power transistor with high power dissipation • Complementary transistor with 2SC4342 QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality gra

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