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NCEP30T12G - N-Channel Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number: NCEP30T12G
Manufacturer: NCE Power Semiconductor
File Size: 369.14 KB
Datasheet: NCEP30T12G-NCEPowerSemiconductor.pdf
Description: N-Channel Power MOSFET

NCEP30T12G Product details

Description

The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance..

Features

VDS =30V,ID =120A RDS(ON)=1.95mΩ (typical) @ VGS=10V RDS(ON)=2.85mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested Application.
DC/DC Converter.
Ideal for high-frequency switching and synchronous rectification SSSG Top View GSSS Bottom View 100% UIS.

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N-Channel Power MOSFET NCE Power Semiconductor

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NCEP30T12G Stock/Price