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NCEP039N10MD - N-Channel Power MOSFET

This page provides the datasheet information for the NCEP039N10MD, a member of the NCEP039N10M N-Channel Power MOSFET family.

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =100V,ID =135A RDS(ON)=3.65mΩ , typical (TO-220)@ VGS=10V RDS(ON)=3.5mΩ , typical (TO-263)@ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • Pb-free Mold Compound 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP039N10M NCEP039N10M TO-220 -.

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Datasheet Details

Part number NCEP039N10MD
Manufacturer NCE Power Semiconductor
File Size 333.92 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NCEP039N10MD Datasheet
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Full PDF Text Transcription

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NCEP039N10M, NCEP039N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =100V,ID =135A RDS(ON)=3.65mΩ , typical (TO-220)@ VGS=10V RDS(ON)=3.
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