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NCEP023N10T Datasheet, NCE Power Semiconductor

NCEP023N10T mosfet equivalent, n-channel power mosfet.

NCEP023N10T Avg. rating / M : 1.0 rating-11

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NCEP023N10T Datasheet

Features and benefits


* VDS =100V,ID =280A RDS(ON)=1.85mΩ , typical@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating .

Application

that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other ap.

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(O.

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NCEP023N10T Page 1 NCEP023N10T Page 2 NCEP023N10T Page 3

TAGS

NCEP023N10T
N-Channel
Power
MOSFET
NCEP023N10LL
NCEP02515K
NCEP02590T
NCE Power Semiconductor

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