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NCEP0190G - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP0190G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =100V,ID =90A RDS(ON)=5.8mΩ (typical) @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Schematic Diagram DDDD DDDD.

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Datasheet Details

Part number NCEP0190G
Manufacturer NCE Power Semiconductor
File Size 356.78 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP0190G Datasheet
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http://www.ncepower.com Pb Free Product NCEP0190G NCE N-Channel Super Trench Power MOSFET Description The NCEP0190G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =90A RDS(ON)=5.
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