* VDS = 82V,ID =140A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.3mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson.

General Features
* VDS = 82V,ID =140A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.3mΩ)
* Special process technology for h.

The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 82V,ID =140A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.3mΩ)
* Spec.

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