NCE8290B mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =82V,ID =90A RDS(ON) < 8.8 mΩ @ VGS=10V
(Typ:7.5mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.
General Features
* VDS =82V,ID =90A RDS(ON) < 8.8 mΩ @ VGS=10V
(Typ:7.5mΩ)
* High density cell design for ul.
The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
General Features
* VDS =82V,ID =90A RDS(ON) < 8.8.
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