NCE6990 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =69V,ID =90A RDS(ON) < 7.2mΩ @ VGS=10V
(Typ:6.2mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche v.
General Features
* VDS =69V,ID =90A RDS(ON) < 7.2mΩ @ VGS=10V
(Typ:6.2mΩ)
Schematic diagram
* High density .
The NCE6990 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =69V,ID =90A RDS(ON) < 7.2mΩ @ VGS=10V
(Typ:6.2mΩ)
Schematic dia.
Image gallery
TAGS
Download (Size : 397.40KB)