NCE65T680I Datasheet, NCE Power Semiconductor

*New technology for high voltage device
*Low on-resistance and low conduction losses
*Small package
*Ultra Low Gate Charge cause lower driving requirement.

Features
*New technology for high voltage device
*Low on-resistance and low conduction losses
*Small packag.

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industr.