NCE60P04R mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-60V,ID =-4.3A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche volt.
General Features
* VDS =-60V,ID =-4.3A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V
* High density cel.
The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.
General Features
* VDS =-60V,ID =-4.3A RDS(ON) <120mΩ @ VGS=-.
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