NCE603S mosfet equivalent, n & p-channel enhancement mode power mosfet.
* N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V
Schematic diagram
* P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V
* High power and current.
General Features
* N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V
Schematic diagram
* P-Channel VDS =.
The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
* N-Channel VDS.
Image gallery
TAGS
Download (Size : 406.26KB)