NCE55P05S mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellen.
General Features
* VDS =-55V,ID =-5A RDS(ON) <80mΩ @ VGS=-10V
* High density cell design for ultra low Rdson <.
Image gallery
Download