NCE25G120P Datasheet (NCE Power Semiconductor)

Part NCE25G120P
Description Trench NPT IGBT
Manufacturer NCE Power Semiconductor
Size 314.43 KB
NCE Power Semiconductor

NCE25G120P Overview

Description

Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications.

Key Features

  • High speed switching
  • Low saturation voltage: VCE(sat)=2.0V@IC=25A
  • High input impedance