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NCE25G120P Datasheet Trench Npt IGBT

Manufacturer: NCE Power Semiconductor

Overview: http://.ncepower. NCE25G120P 1200V, 25A, Trench NPT IGBT.

General Description

Using advanced Trench NPT technology, NCE’s 1200V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness.

This device is designed for soft switching applications.

Absolute Maximum Ratings Pb Free Product NCE25G120P C G E Symbol Description VCES VGES IC ICM(1) PD TJ Tstg Collector to Emitter Voltage Gate to Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current @TC=25°C @TC=100°C Maximum Power Dissipation @TC=25°C Maximum Power Dissipation @TC=100°C Operating Junction Temperature Storage Temperature Range Maximum Lead Temp.

Key Features

  • z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z High input impedance.

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