NCE20NF50F Datasheet, NCE Power Semiconductor

*New technology for high voltage device
*Low on-resistance and low conduction losses
*Intrinsic fast-recovery body diode
*Extreme low reverse recovery cha.

Features
*New technology for high voltage device
*Low on-resistance and low conduction losses
*Intrinsic fa.

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap.