NCE20H11K mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =20V,ID =110A RDS(ON) <4mΩ @ VGS=10V
(Typ3mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
*.
General Features
* VDS =20V,ID =110A RDS(ON) <4mΩ @ VGS=10V
(Typ3mΩ)
* High density cell design for ultra lo.
The NCE20H11K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =20V,ID =110A RDS(ON) <4mΩ @ VGS=10V
(Typ3mΩ)
* High densi.
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