NCE2025I mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =20V,ID =25A RDS(ON) <13mΩ @ VGS=10V
(Typ:10.5mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current <.
General Features
* VDS =20V,ID =25A RDS(ON) <13mΩ @ VGS=10V
(Typ:10.5mΩ)
* High density cell design for ultr.
The NCE2025I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =20V,ID =25A RDS(ON) <13mΩ @ VGS=10V
(Typ:10.5mΩ)
* High de.
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