NCE15H11T mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDSS =150V,ID =110A RDS(ON) < 13mΩ @ VGS=10V （Typ：10 mΩ）
* Good stability and uniformity with high EAS
* Special process technology for high ESD capability .
and a wide variety of other applications.
General Features
* VDSS =150V,ID =110A RDS(ON) < 13mΩ @ VGS=10V （Typ：10 m.
The NCE15H11T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.
General Features
* VDSS =150V,ID =110A RDS(ON) < 13mΩ.
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