NCE1583T mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =150V,ID =83A RDS(ON) < 18.5mΩ @ VGS=10V (Typ:15.7mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.
General Features
* VDS =150V,ID =83A RDS(ON) < 18.5mΩ @ VGS=10V (Typ:15.7mΩ)
* High density cell design for ul.
The NCE1583T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =150V,ID =83A RDS(ON) < 18.5mΩ @ VGS=10V (Typ:15.7mΩ)
* High .
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