NCE1450 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =140V,ID =50A RDS(ON) < 28mΩ @ VGS=10V
(Typ:24.5mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche .
General Features
* VDS =140V,ID =50A RDS(ON) < 28mΩ @ VGS=10V
(Typ:24.5mΩ)
Schematic diagram
* High density.
The NCE1450 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =140V,ID =50A RDS(ON) < 28mΩ @ VGS=10V
(Typ:24.5mΩ)
Schematic di.
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