NCE01H29TC mosfet equivalent, n-channel enhancement mode power mosfet.
* VDSS =100V,ID =290A RDS(ON) < 3.2mΩ @ VGS=10V （Typ：2.7mΩ）
* Good stability and uniformity with high EAS
* High density cell design for ultra low Rdson
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General Features
* VDSS =100V,ID =290A RDS(ON) < 3.2mΩ @ VGS=10V （Typ：2.7mΩ）
* Good stability and uniformity w.
The NCE01H29TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications.
General Features
* VDSS =100V,ID =290A RDS(ON) < 3.2mΩ @ VGS=10V （Typ：2.7mΩ）
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