NCE0130K mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 100V,ID =30A RDS(ON) < 28mΩ @ VGS=10V
(Typ:24mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson.
General Features
* VDS = 100V,ID =30A RDS(ON) < 28mΩ @ VGS=10V
(Typ:24mΩ)
* Special process technology for h.
The NCE0130K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 100V,ID =30A RDS(ON) < 28mΩ @ VGS=10V
(Typ:24mΩ)
* Specia.
Image gallery
TAGS
Download (Size : 384.94KB)