NCE0107AK mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 100V,ID = 7A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:140mΩ)
* High density cell design for ultra low Rdson
* Fully charact.
General Features
* VDS = 100V,ID = 7A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170mΩ @ VGS=4.5V (Typ:140mΩ)
<.
The NCE0107AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 100V,ID = 7A RDS(ON) <160mΩ @ VGS=10V (Typ:136mΩ) RDS(ON) <170.
Image gallery
TAGS
Download (Size : 394.49KB)