NCE75H26T mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDSS =75V,ID =260A RDS(ON) < 3mΩ @ VGS=10V (Typ:2.3 mΩ)
Schematic diagram
* Good stability and uniformity with high EAS
* Special process technology for h.
and a wide variety of other applications.
General Features
* VDSS =75V,ID =260A RDS(ON) < 3mΩ @ VGS=10V (Typ:2.3 mΩ.
The NCE75H26T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications.
General Features
* VDSS =75V,ID =260A RDS(ON) < 3mΩ @.
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