NCE7580T mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ）
* Special process technology for high ESD capability
* Special designed for Convertors and power control.
GENERAL FEATURES
* VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ）
* Special process technology for high E.
The NCE7580T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
GENERAL FEATURES
* VDS = 75V,ID =80A RDS(ON) <8mΩ.
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