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TIP32A - High Power Bipolar Transistor

This page provides the datasheet information for the TIP32A, a member of the TIP31 High Power Bipolar Transistor family.

Features

  • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V (Minimum) - TIP31C, TIP32C.
  • Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A.
  • Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA TO-220 Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Maximum Ratings Dimensions A B C D E F G H I J K L M O Characteristic Collector - emitter voltage Collector - base voltage Emitt.

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Datasheet Details

Part number TIP32A
Manufacturer Multicomp
File Size 238.11 KB
Description High Power Bipolar Transistor
Datasheet download datasheet TIP32A Datasheet
Additional preview pages of the TIP32A datasheet.

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Other Datasheets by Multicomp
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Full PDF Text Transcription

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TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V (Minimum) - TIP31C, TIP32C • Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A • Current gain - bandwidth product fT = 3 MHz (Minimum) at IC = 500 mA TO-220 Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Maximum Ratings Dimensions A B C D E F G H I J K L M O Characteristic Collector - emitter voltage Collector - base voltage Emitter - base voltage Collector current - continuous - peak Base current Total power dissipation at tc = 25°C derate above 25°C Operating and storage junction temperature range Minimum Maximum 14.68 15.31 9.78 10.42 5.01 6.52 13.06 14.62 3.57 4.07 2.42 3.66 1.12 1.
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