Plastic PNP TO-220 silicon power transistor is designed for various specific and general purpose applications such as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz series shunt and switching regulators low and high frequency inverters/converters and ma
Features
Very low collector saturation voltage.
Excellent linearity.
Fast switching
Absolute Maximum Ratings
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Symbol VCEO VCES VEBO IC IB
PD
Rating 45 45 5 10 2 50 0.4
Tj, Tstg -55 to +150
Unit
V
A A W W/°C °C
Emitter 3
2 Collector
1 Base
Pin.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Bipolar Transistor
Description:
Plastic PNP TO-220 silicon power transistor is designed for various specific and general purpose applications such as output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz series shunt and switching regulators low and high frequency inverters/converters and many others.
PNP
Features:
• Very low collector saturation voltage • Excellent linearity • Fast switching
Absolute Maximum Ratings
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Symbol VCEO VCES VEBO IC IB
PD
Rating 45 45 5 10 2 50 0.
D45H4 Datasheet
