NPN Silicon High Voltage Power Transistors
Absolute Maximum Ratings:
(Ta = 25°C unless otherwise specified) Characteristic
Collector Base Voltage Collector Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current-Peak Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating Storage Temperature Range Thermal Resistance Junction to Ambient in Free A.
Precision constant voltage / constant current power supply primary side controller
ETC
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High Voltage Power Transistor
Pin Configuration 1. Emitter 2. Base 3. Collector
Features:
• Devices with breakdown voltages of 160V minimum • NPN Silicon High Voltage Power Transistors
Absolute Maximum Ratings:
(Ta = 25°C unless otherwise specified) Characteristic
Collector Base Voltage Collector Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current-Peak Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating Storage Temperature Range Thermal Resistance Junction to Ambient in Free Air Junction to Case
Symbol VCBO VCES VEBO IC ICM
PD
Tj, Tstg
Rth(j-a) Rth(j-c)
Value
300
5 100 300
1 5.7 5 28.57 -65 to +200
175 35
Unit V
A
W mW/°C
°C
°C/W
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BF259 Datasheet
