Datasheet Summary
BDX33, 34
Darlington Transistors
Features
:
- Collector-Emitter sustaining voltageVCEO(sus) = 80V (Minimum)
- BDX33B, BDX34B = 100V (Minimum)
- BDX33C, BDX34C
- Monolithic construction with Built-in Base-Emitter shunt resistor.
Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case)
Dimensions Minimum Maximum
B 9.78 10.42
C 5.01 6.52
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
NPN BDX33B BDX33C
PNP BDX34B BDX34C
10 Ampere plementary Silicon
Power Transistors 80
- 100 Volts 70 Watts
TO-220
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