2N6476 transistor equivalent, bipolar transistor.
* Low Saturation Voltage
Maximum Ratings:
Characteristic Collector-Base Voltage
Collector-Emitter Voltage (RBB = 1≤00Ω, VBB = 0) Collector-Emitter Voltage
Emitter .
This devices is especially designed for series and shunt regulators and as a driver and output stage of high-fidelity a.
The 2N6476, PNP General Purpose, medium power silicon transistor in a TO-220 type package designed for switching and amplifier applications. This devices is especially designed for series and shunt regulators and as a driver and output stage of high.
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