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Multicomp

2N5038 Datasheet Preview

2N5038 Datasheet

NPN Transistor

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Transistor, NPN
TO-3
Description:
Fast switching speeds and high current capacity ideally suit these parts
for use in switching regulators, inverters, wide-band amplifiers and power
oscillators in industrial and commercial applications
Features:
•  High speed - tf = 0.5μs (Max.)
•  High current - IC (max.) = 30A
•  Low saturation - VCE (sat) = 2.5V (max.) at IC = 20A
•  Pb-free package
Maximum Ratings
Rating
Collector-Emitter Voltage
CoIIector-Base Voltage
CoIIector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
-Peak (Note 2)
Base Current-Continuous
Total Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCBO
VCEV
VEBO
IC
ICM
PB
PD
TJ, TStg
Value
90
150
7
20
30
5
140
0.8
-65 to +200
Unit
V DC
A DC
W
W/°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case
Symbol
R
θJC
Max.
1.25
Unit
°C/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation
above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating
conditions may affect device reliability
1. Indicates JEDEC registered data
2. Pulse test: pulse width ≤10ms, duty cycle ≤50%
www.element14.com
www.farnell.com
www.newark.com
Page <1>
18/03/13 V1.0




Multicomp

2N5038 Datasheet Preview

2N5038 Datasheet

NPN Transistor

No Preview Available !

Transistor, NPN
TO-3
Switching Time Test Circuit
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Off Characteristics
Collector-Emitter Sustaining Voltage (Note 4)
(lC = 200mA DC, lB = 0)
Collector Cut off Current
(VCE = 140V DC, VBE (off) = 1.5V)
(VCE = 100V DC, VBE (off) = 1.5V DC, TC = 150°C)
Emitter Cut off Current
(VEB = 5V DC, IC = 0 )
(VEB = 7V DC, IC = 0 )
On Characteristics (Note 4)
VCEO (sus)
ICEX
IEBO
DC Current Gain
(IC = 12A DC, VCE = 5V DC)
Collector-Emitter Saturation Voltage
(IC = 20A DC, lB = 5A DC)
Base-Emitter Saturation Voltage
(IC = 20A DC, IB = 5A DC)
Dynamic Characteristics
hFE
VCE (sat)
VBE (sat)
Magnitude of Common-Emitter Small-Signal Short-Circuit Forward
Current Transfer Ratio (IC = 2A DC, VCE = 10V DC, f = 5MHz)
Switching Characteristics
hfe
Resistive Load
Rise Time
Storage Time
(VCC = 30V DC)
(IC = 12A DC, IB1 = IB2 = 1.2A DC)
tr
ts
Note:
3. Indicates JEDEC Registered Data.
4. Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%
Min.
90
-
-
20
-
-
12
-
-
Max.
-
50
10
5
50
100
2.5
3.3
-
0.5
1.5
Unit
V DC
mA DC
-
V DC
-
µs
www.element14.com
www.farnell.com
www.newark.com
Page <2>
18/03/13 V1.0


Part Number 2N5038
Description NPN Transistor
Maker Multicomp
Total Page 3 Pages
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