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2N4032 - Power Transistor

General Description

A Silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications.

Key Features

  • high breakdown voltage, low leakage current. Low capacity, and beta useful over an extremely wide current range. Pin Configurations: 1. Emitter 2. Base 3. Collector Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TC = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range, Thermal Resistance, Ju.

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Datasheet Details

Part number 2N4032
Manufacturer Multicomp
File Size 260.02 KB
Description Power Transistor
Datasheet download datasheet 2N4032 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistor Description: A Silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current. Low capacity, and beta useful over an extremely wide current range. Pin Configurations: 1. Emitter 2. Base 3.