2N3700 transistor equivalent, bipolar transistor.
high breakdown voltage, Low leakage current, low capacity, and beta useful over an extremely wide current range.
Maximum Ratings:
Characteristic Collector-Base Voltage C.
The device features high breakdown voltage, Low leakage current, low capacity, and beta useful over an extremely wide c.
This is a silicon NPN transistor in a TO-18 type case designed primarily for amplifier and switching applications. The device features high breakdown voltage, Low leakage current, low capacity, and beta useful over an extremely wide current range.
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