2N2647
Description
:
A PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits.
Features
:
- Low peak point current: 2µA (Max.)
- Low emitter reverse current: 200n A (Max.)
- Passivated surface for reliability and uniformity
Maximum Ratings
Characteristic
Symbol
Rating
Unit
Power Dissipation (Note 1) RMS Emitter Current Peak Pulse Emitter Current (Note 2) Emitter Reverse Voltage Interbase Voltage Operation and Storage Junction Temperature Range
PD IE(RMS)
IE VB2E VB2B1 TJ, TSTG
300 50 2 30 35 -65 to +150 m W m A A
°C
Notes: 1. Derate 3m W/°C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-Tow) must be limited by the external circuitry.
2. Capacitor discharge
- 10µF or less, 30V or less.
.element14. .farnell. .newark.
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21/03/13 V1.0
Transistor
Unijunction
Electrical...
