Datasheet Details
| Part number | SLP120N06T |
|---|---|
| Manufacturer | Msemitek |
| File Size | 1.02 MB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
 SLP120N06T Datasheet
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General Description
This Power MOSFET is produced using Msemitek‘s advanced TRENCH technology.
This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- - 120A, 60V, RDS(on)Typ = 4.4mΩ@VGS = 10 V - Very Low On-resistance RDS(ON) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220C SLP120N06T D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy (Note 1) (Note 2) PD Power Dissipation (TC =.