MRF6V3090NBR1 transistors equivalent, rf power field effect transistors.
* Characterized with Series Equivalent Large--Signal Impedance Parameters
* Internally Input Matched for Ease of Use
* Qualified Up to a Maximum of 50 VDD Ope.
with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications.
* Typical DVB--T OFDM .
22 μF, 35 V Tantalum Capacitor 10 μF, 50 V Chip Capacitors 43 pF Chip Capacitors 6.2 pF Chip Capacitor 2.2 pF Chip Capacitor 9.1 pF Chip Capacitor 220 μF, 100 V Electrolytic Capacitors 7.5 pF Chip Capacitors 3.0 pF Chip Capacitor 0.7 pF Chip Capacito.
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