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MHL21336N - RF Linear LDMOS Amplifier

MHL21336N Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MHL21336N Rev.7, 8/2006 3G Band RF Linear LDMOS Amplifier Designed for.

MHL21336N Features

* Excellent Phase Linearity and Group Delay Characteristics

MHL21336N Applications

* in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.
* Third Order Intercept: 45 dBm Typ

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Datasheet Details

Part number
MHL21336N
Manufacturer
Motorola Semiconductor
File Size
142.60 KB
Datasheet
MHL21336N_MotorolaSemiconductor.pdf
Description
RF Linear LDMOS Amplifier

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Linear LDMOS Amplifier Motorola Semiconductor
Motorola Semiconductor MHL21336N-like datasheet