MHL21336N Datasheet | Motorola Semiconductor

Features - Excellent Phase Linearity and Group Delay Characteristics - Ideal for Feedforward Base Station Applications - N Suffix Indicates Lead - Free Terminations - 2170 MHz 3.0 W, 31 d B RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +5 - 40 to +100 - 20 to +100 Unit Vdc d Bm °C °C Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 d B pression (f = 2140 MHz) (f = 2110 - 2170 MHz) (f = 2140 MHz) Symbol IDD Gp GF P1d B ITO NF Min - 30 - 34 44 - Typ 500 31 0.15 35 45 4.5 Max 525 33 0.4 - - 5 Unit m A d B d B d Bm d Bm d B Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz) Noise Figure (f = 2170 MHz) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. MHL21336N 1 RF Device Data Freescale Semiconductor .. TYPICAL CHARACTERISTICS 40 G p , POWER GAIN/RETURN LOSS (d B) 30 20 P1d B, ITO (d Bm) 10 0 - 10 IRL - 20 - 30 - 40 1400 1600 1800 2000 2200 2400 2600 2800 30 25 1800 ORL 45 40 35 P1d B Gp VDD = 26 Vdc TC = 25_C 55 50 ITO VDD = 26 Vdc TC = 25_C 2500 f, FREQUENCY (MHz) f, FREQUENCY...