MHL19338N Datasheet | Motorola Semiconductor

Features - Excellent Phase Linearity and Group Delay Characteristics - Ideal for Feedforward Base Station Applications - N Suffix Indicates Lead - Free Terminations - 2000 MHz 4.0 W, 30 d B RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +10 - 40 to +100 - 20 to +100 Unit Vdc d Bm °C °C Table 2. Electrical Characteristics (VDD = 28 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 d B pression (f = 1960 MHz) (f = 1900 - 2000 MHz) (f = 1950 MHz) Symbol IDD Gp GF P1d B ITO NF Min - 29 - 35 45 - Typ 500 30 0.1 36 46 4.2 Max 525 32 0.4 - - 4.5 Unit m A d B d B d Bm d Bm d B Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz) Noise Figure (f = 2000 MHz) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. MHL19338N 1 RF Device Data Freescale Semiconductor .. PACKAGE DIMENSIONS A G 0.020 (0.51) 2X Q 0.008 (0.20) 4X 1 2 3 4 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC RF INPUT VDD1 VDD2 RF OUTPUT GROUND MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC 0.020...