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TPV8200B - RF Power Transistor

Features

  • high impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a single fixed tuned circuit.
  • To be used class AB for TV band IV and V.
  • Specified 28 Volts, 860 MHz Characteristics Output Power = 190 Watts (peak sync. ) Output Power = 150 Watts (CW) Gain = 8 dB Min.
  • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. TPV8200B Motorola Preferred Device 190 W, 470.
  • 860 MHz RF POWER.

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Full PDF Text Transcription

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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by TPV8200B/D NPN Silicon RF Power Transistor The TPV8200B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including input and output matching networks, the TPV8200B features high impedances. It can operate over the 470 MHz to 860 MHz bandwidth using a single fixed tuned circuit. • To be used class AB for TV band IV and V. • Specified 28 Volts, 860 MHz Characteristics Output Power = 190 Watts (peak sync.) Output Power = 150 Watts (CW) Gain = 8 dB Min • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
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