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Motorola Electronic Components Datasheet

PHPM7A10S120DC3 Datasheet

Hybrid Power Module

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MHPM7A10S120DC3/D
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Hybrid Power Module
Integrated Power Stage for 2.0 hp
460 VAC Motor Drive
This module integrates a 3–phase inverter, 3–phase rectifier,
brake, and temperature sense in a single convenient package. It is
designed for 2.0 hp general purpose 3–phase induction motor drive
applications. The inverter incorporates advanced insulated gate
bipolar transistors (IGBT) matched with fast soft free–wheeling
diodes to give optimum performance. The solderable top connector
pins are designed for easy interfacing to the user’s control board.
Short Circuit Rated 10 µs @ 125°C, 720 V
Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
Compact Package Outline
Access to Positive and Negative DC Bus
Independent Brake Circuit Connections
UL Recognition Pending
Device
PHPM7A10S120DC3
ORDERING INFORMATION
Voltage
Rating
Current
Rating
1200
10
Equivalent
Horsepower
2.0
MHPM7A10S120DC3
Motorola Preferred Device
10 AMP, 1200 VOLT
HYBRID POWER MODULE
CASE 464D–01
ISSUE O
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Repetitive Peak Input Rectifier Reverse Voltage (TJ = 25°C to 150°C)
Non–Repetitive Peak Input Rectifier Reverse Voltage (1)
(TJ = 25°C to 150°C)
VRRM
VRSM
900
1600
IGBT Reverse Voltage
Gate-Emitter Voltage
Continuous IGBT Collector Current (TC = 25°C)
Repetitive Peak IGBT Collector Current (2)
Continuous Free–Wheeling Diode Current (TC = 25°C)
Continuous Free–Wheeling Diode Current (TC = 80°C)
Repetitive Peak Free–Wheeling Diode Current (2)
Average Converter Output Current (Peak–to–Average ratio of 10, TC = 95°C)
IGBT Power Dissipation per die (TC = 95°C)
Free–Wheeling Diode Power Dissipation per die (TC = 95°C)
VCES
VGES
ICmax
IC(pk)
IFmax
IF80
IF(pk)
IOmax
PD
PD
1200
± 20
10
20
10
8.6
20
16
29
13
Junction Temperature Range
Short Circuit Duration (VCE = 720 V, TJ = 125°C)
Isolation Voltage, pin to baseplate
Operating Case Temperature Range
Storage Temperature Range
Mounting Torque — Heat Sink Mounting Holes
TJ
tsc
VISO
TC
Tstg
– 40 to +150
10
2500
– 40 to +95
– 40 to +150
12
(1) Half–Sine 60 Hz, maximum reverse voltage capability decreases by 0.1% per °C at lower temperature
(2) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Unit
V
V
V
V
A
A
A
A
A
A
W
W
°C
ms
Vac
°C
°C
lb–in
©MMoottoorroollaa, IInGc.B1T998Device Data
1


Motorola Electronic Components Datasheet

PHPM7A10S120DC3 Datasheet

Hybrid Power Module

No Preview Available !

MHPM7A10S120DC3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
DC AND SMALL SIGNAL CHARACTERISTICS
Input Rectifier Forward Voltage (IF = 10 A)
Gate–Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)
Collector–Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)
Gate–Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Collector–Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)
Collector–Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)
Free–Wheeling Diode Forward Voltage (IF = IFmax, VGE = 0 V)
Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz)
Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)
THERMAL CHARACTERISTICS, EACH DIE
Thermal Resistance — IGBT
Thermal Resistance — Free–Wheeling (Fast Soft) Diode
Thermal Resistance — Input Rectifier
TEMPERATURE SENSE DIODE
Forward Voltage (@ IF = 1.0 mA)
Forward Voltage Temperature Coefficient (@ IF = 1.0 mA)
Symbol Min Typ Max Unit
VF
IGES
ICES
VGE(th)
V(BR)CES
VCE(sat)
VF
Cies
QT
4.0
1200
1.8
1.02
5.0
6.0
2.5
2.0
1200
65
1.25
±20
100
8.0
3.5
2.4
V
mA
mA
V
V
V
V
pF
nC
RqJC
RqJC
RqJC
— 1.4 1.9 °C/W
— 3.2 4.2 °C/W
— 3.2 4.2 °C/W
VF
TCVF
1.983
2.024
–8.64
2.066
V
mV/°C
2 Motorola IGBT Device Data


Part Number PHPM7A10S120DC3
Description Hybrid Power Module
Maker Motorola Inc
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