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Motorola Electronic Components Datasheet

BCW65ALT1 Datasheet

General Purpose Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW65ALT1/D
General Purpose Transistor
NPN Silicon
COLLECTOR
3
BCW65ALT1
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BCW65ALT1 = EA
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
32
60
5.0
800
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, VEB = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 32 Vdc, IE = 0)
(VCE = 32 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
IEBO
Min
32
60
5.0
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 20 nAdc
— 20 µAdc
— 20 nAdc
Thermal Clad is a trademark of the Bergquist Company
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1


Motorola Electronic Components Datasheet

BCW65ALT1 Datasheet

General Purpose Transistor

No Preview Available !

BCW65ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
Base – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
hFE —
35 — —
75 — 220
100 — 250
35 — —
VCE(sat)
Vdc
— 0.7 —
— 0.3 —
VBE(sat)
Vdc
— 2.0
Current – Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
fT
Cobo
Cibo
NF
100
— MHz
12 pF
80 pF
10 dB
Turn–On Time
(IB1 = IB2 = 15 mAdc)
Turn–Off Time
(IC = 150 mAdc, RL = 150 )
ton — — 100 ns
toff — — 400 ns
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number BCW65ALT1
Description General Purpose Transistor
Maker Motorola Inc
Total Page 4 Pages
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