BCW65ALT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BCW65ALT1/D
General Purpose Transistor
NPN Silicon
COLLECTOR 3 1 BASE
3 1
2 EMITTER
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous Symbol VCEO VCBO VEBO IC Value 32 60 5.0 800 Unit Vdc Vdc Vdc m Adc
CASE 318
- 08, STYLE 6 SOT- 23 (TO
- 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq JA PD 556 300 2.4 Rq JA TJ, Tstg 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
DEVICE MARKING
BCW65ALT1 = EA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector
- Emitter Breakdown...
