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4N27 - 6-Pin DIP Optoisolators Transistor

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  • al or incidental damages. “Typical” parameters can and do vary in different.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N25/D GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N25/A, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Most Economical Optoisolator Choice for Medium Speed, Switching Applications • Meets or Exceeds All JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option.