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Motorola Electronic Components Datasheet

P2N5551 Datasheet

AMPLIFIER TRANSISTORS

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T
P2N5550
P2N5551
CASE 29-02, STYLE 17
TO-92 (TO-226AA)
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to 2N5550 for graphs.
MAXIMUM RATINGS
Rating
Symbol 2N 2N
5550 5551
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation T/\ = 25°C
Derate above 25°C
Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
ic
PD
pd
Tj, st g
140 160
160 180
6.0
600
625
5.0
1.5
12
-55 to +150
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Rfjjc
83.3
°C/W
Thermal Resistance, Junction to Ambient RfjJA
200
°c/w
(1) RftJA is mesured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS <TA = 25 °C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (2)
(IC = 10 mAdc, Ib = 0)
P2N5550
P2N5551
Collector-Base Breakdown Voltage
dC = 100uAdc, IE = 0)
P2N5550
P2N5551
Emitter-Base Breakdown Voltage
(IE = 10 nAdc, Ic = 0)
Collector Cutoff Current
(VcB = 100 Vdc, El = 0)
(V C B = 120 Vdc, Ie = 0)
(VcB = 100 Vdc, = 0, Ta = 100°C)
(VcB = 120 Vdc, = 0. Ta = 100°C)
P2N5550
P2N5551
P2N5550
P2N5551
Emitter Cutoff Current
(V E b = 4.0 Vdc, Cl = 0)
ON CHARACTERISTICS (2)
DC Current Gain
dC = 1 mAdc, Vce = 5.0 Vdc)
(lC = 10 mAdc, Vce = 5.0 Vdc)
(lC = 50 mAdc, Vce = 5.0 Vdc)
P2N5550
P2N5551
P2N5550
P2N5551
P2N5550
P2N5551
Collector-Emitter Saturation Voltage
(lC = 10 mAdc, Ib = 10 mAdc)
(lC = 50 mAdc, Ib = 5.0 mAdc)
Both Types
P2N5550
P2N5551
Base-Emitter Saturation Voltage
dC = 10 mAdc, Ib = 10 mAdc)
(lC = 50 mAdc, Ib = 5.0 mAdc)
Both Types
P2N5550
P2N5551
Symbol
V(BR)CEO
V(BR)CB0
V(BR)EBO
•ICBO
lEBO
hFE
VCE(sat)
VBE(sat)
140
160
160
180
6.0
60
80
60
80
20
30
Max
100
50
100
50
50
-
250
250
0.15
0.25
0.20
1.0
1.2
1.0
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
Vdc
Vdc
2-296


Motorola Electronic Components Datasheet

P2N5551 Datasheet

AMPLIFIER TRANSISTORS

No Preview Available !

P2N5550, P2N5551
ELECTRICAL CHARACTERISTICS (continued) (TA = 25 °C unless otherwise noted.)
Characteristic
Symbol
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product
(IC = 10 mAdc, Vce = 10 Vdc, f = 100 MHz)
Output Capacitance
(VcB = 1 Vdc, Ie = 0, f = 1-0 MHz)
Input Capacitance
(VBE = 05 Vdc, lc = 0, f = 1 .0 MHz)
P2N5550
P2N5551
Cobo
Cibo
Small-Signal Current Gain
(IC = 10 mAdc, Vce = 1 Vdc, f = 1 .0 kHz)
Noise Figure
(IC = 250 nAdc, Vce = 5.0 Vdc, Rs = 1-0 kohms,
f = 10 Hz to 15.7 kHz)
(2) Pulse Test: Pulse Width = 300 us. Duty Cycle = 2.0%.
P2N5550
P2N5551
NF
Min
100
Max
300
6.0
30
20
200
10
8.0
Unit
pF
PF
dB
2-297


Part Number P2N5551
Description AMPLIFIER TRANSISTORS
Maker Motorola
Total Page 2 Pages
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