This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MW4IC915MBR1 |
|---|---|
| Datasheet | MW4IC915MBR1 MW4IC915GMBR1 Datasheet (PDF) |
| File Size | 702.82 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS |
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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC915/D RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MW4IC915GMBR1 | RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS |
| MW4IC915GNBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC915NBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC2020GMBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC2020MBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC2230GMBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC2230MBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
