| Part number | MW4IC915GNBR1 |
|---|---|
| Datasheet | MW4IC915GNBR1_Motorola.pdf |
| File Size | 369.58 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | RF LDMOS Wideband Integrated Power Amplifiers |
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Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi−stage structure.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MW4IC915GMBR1 | RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS |
| MW4IC915MBR1 | RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS |
| MW4IC915NBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC2020GMBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC2020MBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC2230GMBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC2230MBR1 | RF LDMOS Wideband Integrated Power Amplifiers |
