• Part: MW4IC915GNBR1
  • Description: RF LDMOS Wideband Integrated Power Amplifiers
  • Manufacturer: Motorola Semiconductor
  • Size: 369.58 KB
Download MW4IC915GNBR1 Datasheet PDF
Motorola Semiconductor
MW4IC915GNBR1
MW4IC915GNBR1 is RF LDMOS Wideband Integrated Power Amplifiers manufactured by Motorola Semiconductor.
.. Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi- stage structure. Its wideband On- Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N- CDMA and W- CDMA. Final Application - Typical Performance: VDD = 26 Volts, IDQ1 = 60 m A, IDQ2 = 240 m A, Pout = 15 Watts CW, Full Frequency Band (860- 960 MHz) Power Gain - 30 d B Power Added Efficiency - 44% Driver Application - Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 m A, IDQ2 = 240 m A, Pout = 3 Watts Avg., Full Frequency Band (869- 894 MHz and 921- 960 MHz) Power Gain - 31 d B Power Added Efficiency - 19% Spectral Regrowth @ 400 k Hz Offset = - 65 d Bc Spectral Regrowth @ 600 k Hz Offset = - 83 d Bc EVM - 1.5% - Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW Output Power - Characterized with Series Equivalent Large- Signal Impedance Parameters - On- Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) - Integrated Quiescent Current Temperature pensation with Enable/Disable Function - On- Chip Current Mirror gm Reference FET for Self Biasing Application(1) - Integrated ESD Protection - N Suffix Indicates Lead- Free Terminations - 200°C Capable Plastic Package - Also Available in Gull Wing for Surface Mount - In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VRD2 VRG2 VDS1 RFin VRD1 VRG1 VGS1 VGS2 VDS2/RFout MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR1 MW4IC915GMBR1 - 960 MHz, 15 W, 26 V GSM/GSM EDGE, N- CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329- 09 TO- 272 WB- 16 PLASTIC MW4IC915NBR1(MBR1) CASE 1329A- 03 TO- 272 WB- 16 GULL PLASTIC MW4IC915GNBR1(GMBR1) GND VRD2 VRG2 VDS1 VRD1 RFin VRG1 VGS1 VGS2 NC GND 1 2 3 4 5 6 7 8...